dm c4015ssd document number: ds 37348 rev. 3 - 2 1 of 9 www.diodes.com november 2014 ? diodes incorporated dm c4015ssd advance inf ormation new product complementary pair enhancement mode mosfet product summary device v (br)dss r ds(on) i d t a = + 25c q1 40v 15 m? @ v gs = 10 v 12.2a 20 m? @ v gs = 4 .5v 10.6a q2 - 40v 29 m? @ v gs = - 10 v - 8.8 a 45 m? @ v gs = - 4 .5v - 7.1a description t his new generation mosfet is designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? dc - dc converters ? power management f unctions ? backlighting features and benefits ? low input capacitance ? low on - resistance ? fast switching speed ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) mechanical data ? case: so - 8 ? case material : molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram ? terminals: finish C matte tin a nnealed over copper l eadframe solderable per mil - std - 202, method 208 ? weight: 0. 074 grams ( approximate ) ordering information (note 4 ) part number case packaging dm c 40 15s sd - 13 so - 8 2 , 5 00/tape & reel notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of halogen - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free "green products ar e defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http://www.diodes.com/products/packages.html. marking information t op view s o - 8 t op view pin configuration d 1 s 1 g 1 d 2 s 2 g 2 q n - channel mosfet q2 p - channel mosfet s 1 d 2 s 2 d 1 g 2 g 1 d 1 d 2 pin1 = manufacturers marking c4015sd = product type marking code yyww = date code marking yy or yy = yea r (ex: 14 = 20 14 ) ww = week (01 - 53) 1 4 8 5 c 4015 sd ww yy 1 4 8 5 c 4015 sd ww yy e3
dm c4015ssd document number: ds 37348 rev. 3 - 2 2 of 9 www.diodes.com november 2014 ? diodes incorporated dm c4015ssd advance inf ormation new product maximum ratings ( @t a = + 25 c , unless otherwise specified .) characteristic symbol value _q 1 value_q 2 units drain - source voltage v dss 40 - 4 0 v gate - source voltage v gss 20 20 v continuous drain current (note 6 ) v gs = 10 v steady state t a = +2 5c t a = +70c i d 8. 6 6.8 - 6. 2 - 4.9 a t<10s t a = +25c t a = +70c i d 12.2 9.8 - 8.8 - 7. 1 a maximum body diode forward current (note 6 ) i s 2.5 - 2. 2 a pulsed drain current ( 10 s pulse, duty cycle = 1% ) i dm 8 0 - 5 0 a avalanche current (note 7 ) l = 0. 1mh i a s 2 7 - 2 5 a avalanche energy (note 7 ) l = 0. 1mh e a s 37 32 mj thermal characteristics ( @t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5) t a = +25c p d 1. 2 w t a = + 70 c 0.9 thermal r esistance, junction to ambient (note 5) s teady s tate r ? ja 106 c/w t<10s 45 total power dissipation (note 6 ) t a = +25c p d 1. 7 w t a = + 70 c 1.1 thermal resistance, junction to ambient (note 6 ) s teady s tate r ? ja 7 6 c/w t<10s 37 the rmal resistance, junction to case (note 6 ) r ? j c 1 2 operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristics n - channel q 1 ( @t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 40 ? ? gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? ? ? ds = 40 v, v gs = 0v gate - source leakage i gss ? ? ? gs = 20 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) 1 ? ds = v gs , i d = 250 a static drai n - source on - resistance r ds (on) ? ? gs = 10 v, i d = 3 a ? ? gs = 4 .5v, i d = 3 a diode forward voltage v sd ? gs = 0v, i s = 1 a dynamic characteristics (note 9 ) input capacitance c iss ? ? ds = 20 v, v gs = 0v , f = 1.0mh z out put capacitance c oss ? ? rss ? ? g ? ? ? ? ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge ( v gs = 4.5 v ) q g ? ? ? ds = 20 v, i d = 3 a total gate charge ( v gs = 10 v ) q g ? ? gs ? ? gd ? ? d(on) ? ? d d = 20 v, i d = 3a v g s = 10 v, r g = 3 r ? ? d(off) ? ? f ? ? ? ? rr ? ? ? ? s = 3 a , di /d t = 1 00a/ rr ? ? ? ? s = 3 a , di /d t = 1 00a/
dm c4015ssd document number: ds 37348 rev. 3 - 2 3 of 9 www.diodes.com november 2014 ? diodes incorporated dm c4015ssd advance inf ormation new product 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? figure 6 on-resistance variation with temperature r , d r a i n - s o u r c e d s ( o n ) o n - r e s i s t a n c e ( n o r m a l i z e d ) v = 4.5v gs i = 3a d v = 10v gs i = 3a d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.01 0.02 0.03 0.04 0.05 0 2 4 6 8 10 12 14 16 18 20 v , gate-source voltage (v) gs figure 4 typical transfer characteristic i = 3.0a d v , drain-source voltage (v) ds figure 1 typical output characteristics i , d r a i n c u r r e n t ( a ) d 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 v = 2.5v gs v = 3.0v gs v = 3.5v gs v = 4.0v gs v = 4.5v gs v = 10v gs r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0 5 10 15 20 25 30 i , drain-source current d figure 3 typical on-resistance vs. drain current and gate voltage v = 4.5v gs v = 10v gs r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.005 0.01 0.015 0.02 0 5 10 15 20 25 30 i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature v = 10v gs t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a
dm c4015ssd document number: ds 37348 rev. 3 - 2 4 of 9 www.diodes.com november 2014 ? diodes incorporated dm c4015ssd advance inf ormation new product 0.8 1.1 1.4 1.7 2 2.3 -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j figure 8 gate threshold variation vs. ambient temperature v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) i = 250a d i = 1ma d 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s t =150c a t = 150c a t = -55c a t = 25c a t = 85c a t = 125c a 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 v = 20v ds i = 3.0a d q , total gate charge (nc) g figure 11 gate-charge characteristics v , g a t e - s o u r c e v o l t a g e ( v ) g s 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v , drain-source voltage (v) ds figure 10 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t c iss c oss c rss f = 1mhz 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0.05 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? figure 7 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = 4.5v gs i = 3a d v = 10v gs i = 3a d
dm c4015ssd document number: ds 37348 rev. 3 - 2 5 of 9 www.diodes.com november 2014 ? diodes incorporated dm c4015ssd advance inf ormation new product electrical characteristics p - channel q 2 ( @t a = +25c, unless othe rwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss - 40 ? ? gs = 0v, i d = - 250 a zero gate voltage drain current i dss ? ? ? ? ds = - 40 v, v gs = 0v gate - source le akage i gss ? ? ? gs = 20 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) - 1 ? ds = v gs , i d = - 250 a static drain - source on - resistance r ds (on) ? ? gs = - 10 v, i d = - 3 a ? ? gs = - 4 .5v, i d = - 3 a diode fo rward voltage v sd ? gs = 0v, i s = - 1 a dynamic characteristics (note 9 ) input capacitance c iss ? ? ds = - 20 v, v gs = 0v , f = 1.0mh z output capacitance c oss ? ? rss ? ? g ? ? ? ? ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge ( v gs = - 4.5 v ) q g ? ? ? ds = - 20 v, i d = - 3 a total gate charge ( v gs = - 10 v ) q g ? ? gs ? ? gd ? ? d(on) ? ? d d = - 20 v, r l = 1.6 v g s = - 10 v, r g = 3 d = - 3a turn - on rise time t r ? ? d(off) ? ? f ? ? ? ? rr ? ? ? ? s = - 3 a , di /d t = 1 00a/ rr ? ? ? ? s = - 3 a , di /d t = 1 00a/ notes: 5. device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6. device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate. 7. i a s and e a s rating are based on low frequency and duty cycles to keep t j = + 25c . 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing.
dm c4015ssd document number: ds 37348 rev. 3 - 2 6 of 9 www.diodes.com november 2014 ? diodes incorporated dm c4015ssd advance inf ormation new product t , junction temperature ( c) j ? figure 17 on-resistance variation with temperature r , d r a i n - s o u r c e d s ( o n ) o n - r e s i s t a n c e ( n o r m a l i z e d ) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 v = -10v gs i = -3a d v = -4.5v gs i = -3a d v , gate-source voltage (v) gs figure 13 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v = -5.0v ds t = -55c a t = 25c a t = 85c a t = 150c a t = 125c a v , gate-source voltage (v) gs figure 15 typical transfer characteristic 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0 2 4 6 8 10 12 14 16 18 20 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i = -3.0a d 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 15 20 25 30 v , drain-source voltage (v) ds figure 12 typical output characteristics i , d r a i n c u r r e n t ( a ) d v = -3.0v gs v = -4.0v gs v = -5.0v gs v = -10v gs v = -2.0v gs v = -2.5v gs v = -3.5v gs v = -4.5v gs i , drain-source current d figure 14 typical on-resistance vs. drain current and gate voltage 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0 5 10 15 20 25 30 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = -10v gs v = -4.5v gs i , drain current (a) d figure 16 typical on-resistance vs. drain current and temperature 0.000 0.010 0.020 0.030 0.040 0.050 0 5 10 15 20 25 30 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = -4.5v gs t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a
dm c4015ssd document number: ds 37348 rev. 3 - 2 7 of 9 www.diodes.com november 2014 ? diodes incorporated dm c4015ssd advance inf ormation new product q , total gate charge (nc) g figure 22 gate-charge characteristics v , g a t e - s o u r c e v o l t a g e ( v ) g s 0 2 4 6 8 10 0 5 10 15 20 25 30 35 v = -20v ds i = -3a d v , source-drain voltage (v) sd figure 20 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 t = -55c a t = 25c a t = 85c a t = 125c a t =150c a t = 150c a t , junction temperature (c) j figure 19 gate threshold variation vs. ambient temperature v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 i = -1ma d i = -250a d c , j u n c t i o n c a p a c i t a n c e ( p f ) t v , drain-source voltage (v) ds figure 21 typical junction capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 f = 1mhz c iss c oss c rss r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0.05 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? figure 18 on-resistance variation with temperature v = -4.5v gs i = -3a d v = -10v gs i = -3a d
dm c4015ssd document number: ds 37348 rev. 3 - 2 8 of 9 www.diodes.com november 2014 ? diodes incorporated dm c4015ssd advance inf ormation new product p ackage outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. so - 8 dim min max a - 1.75 a1 0.10 0.20 a2 1.30 1.50 a3 0.15 0.25 b 0.3 0.5 d 4.85 4.95 e 5.90 6.10 e1 3.85 3.95 e 1.27 typ h - 0.35 l 0.62 0.82 ? ? dimensions value (in mm) x 0.60 y 1.55 c1 5.4 c2 1.27 x c1 c2 y gauge plane seating plane detail a detail a e e1 h l d e b a2 a1 a 45 7 ~ 9 a3 0 . 2 5 4
dm c4015ssd document number: ds 37348 rev. 3 - 2 9 of 9 www.diodes.com november 2014 ? diodes incorporated dm c4015ssd advance inf ormation new product importa nt notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorp orated does not assume any liability arising o ut of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not war rant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hol d diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out o f, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. prod ucts described herein may be covered by one or more united states, international or foreign patents pending. product names a nd markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is w ritten in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically no t authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to t he user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represe nt that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems , and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning t heir products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 4 , diodes incorporated www.diodes.com
|
